transistor(pnp) features . high breakdown voltage marking: m maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -55 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -150 ma pc collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-10u a,i e =0 -55 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 u a,i c =0 -5 v collector cut-off current i cbo v cb =-35v,i e =0 -0.1 u a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 u a dc current gain h fe v ce =-6v,i c =-1ma 200 400 collector-emitter saturation voltage v ce(sat) i c =-50ma,i b =-5ma -0.5 v base -emitter saturation voltage v be(sat) i c =-50ma,i b =-5ma -1.0 v transition frequency f t v ce =-6v,i c =-10ma 180 mhz collector output capacitance c ob v cb =-6v,i e =0,f=1mhz 4 pf sot-23 1. base 2. emitter 3. collector 1 date:2011/05 www.htsemi.com semiconductor jinyu 2sa1 1 7 9
typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu 2sa1 1 7 9
|
